![]() ![]() Also, due to the destructive read process of ferroelectric RAM, a write-after-read architecture is required.įerroelectric RAM is used in many applications such as instrumentation, medical equipment and industrial microcontrollers. Ferroelectric random-access memory and ferroelectric field-effect transistors require ferroelectric materials with high polarization, low operation voltage. Compared to DRAM and SRAM, ferroelectric RAM stores less data in the same space. It has lower storage capacities compared to flash devices and is also expensive. There are certain drawbacks associated with ferroelectric RAM. Cell layouts, material aspects and CMOS compatibility as well as fabrication issues will be discussed. This includes the ferroelectric random access memory (FeRAM) and the ferroelectric field effect transistor (FeFET). There is also greater data reliability with ferroelectric RAM. The paper starts with a short survey on competitive non-volatile memory technologies and focuses then on ferroelectric memories. Compared to similar technologies, ferroelectric RAM provides more write-erase cycles. ![]() Compared with flash storage, it has lower power consumption and faster write performance. Crossbar arrays that use resistive memories such as resistive random-access memories, phase-change memories, and spin-transfer-torque magnetic random-access memories can perform vector. There are many benefits associated with ferroelectric RAM. It also brings another advantage of having low power consumption compared to other alternatives, which greatly helps MCUs, where power consumption has always been a barrier. This helps in having fewer stages for incorporating the memory into the MCUs, resulting in significant cost savings. In a FeFET, electrons or holes are accumulated at the surface of the semiconductor according to the polarization direction of the gate ferroelectric film, and. Ferroelectric RAM is sometimes embedded into CMOS-based chips to help MCUs have their own ferroelectric memories. The orientation of the dipole can be set and reversed with the help of voltage.Ĭompared to more established technologies such as flash and DRAM, ferroelectric RAM is not highly used. The binary values 1 or 0 are stored based on the orientation of the dipole within the capacitor. A ferroelectric RAM memory cell is comprised of a bit line as well as a capacitor connected to a plate. Although development of ferroelectric RAM dates back to the early days of semiconductor technology, the first devices based on ferroelectric RAM were produced around 1999. It noramlly uses lead zirconate titanate, though other materials are also sometimes used. In spite of the name, ferroelectric random-access memory does not actually contain any iron. Techopedia Explains Ferroelectric Random Access Memory ![]()
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